Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Satoshi Kamiyama0
Hiroshi Amano0
Isamu Akasaki0
Motoaki Iwaya0
Date of Patent
July 26, 2011
0Patent Application Number
123131230
Date Filed
November 17, 2008
0Patent Primary Examiner
Patent abstract
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
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