US Patent 7985964 Light-emitting semiconductor device
Patent 7985964 was granted and assigned to Meijo University on July, 2011 by the United States Patent and Trademark Office.
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Patent abstract
The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.
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Patent Inventor Names
Hiroshi Amano0
Isamu Akasaki0
Motoaki Iwaya0
Satoshi Kamiyama0
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US Patent 07985964 Light-emitting semiconductor device US Patent 7985964 Light-emitting semiconductor device
Infobox
Patent Number
079859640
Patent Number
79859640
Edits on 28 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
079859640
Date of Patent
July 26, 2011
0Patent Application Number
123131230
Date Filed
November 17, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
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Infobox (+8 properties)
US Patent 07985964 Light-emitting semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07985964
Date of patent
July 26, 2011
Patent application number
12313123
Date Filed
November 17, 2008
Patent primary examiner
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