Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuh-Sheng Jean0
Kai-Yi Huang0
Ta-Hsun Yeh0
Date of Patent
July 26, 2011
Patent Application Number
12056293
Date Filed
March 27, 2008
Patent Primary Examiner
Patent abstract
The structure of the MOS transistor provided in this invention has LDD (lightly doped drain) and halo doped regions removed from the source, the drain or both regions in the substrate for improved linearity range when operated as a voltage-controlled resistor. The removal of the LDD and halo doped regions is performed by simply modifying the standard mask of the MOS process using a logic operation layer with no extra mask required.
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