US Patent 7986007 MOS transistor and manufacturing method thereof
Patent 7986007 was granted and assigned to Realtek on July, 2011 by the United States Patent and Trademark Office.
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Patent abstract
The structure of the MOS transistor provided in this invention has LDD (lightly doped drain) and halo doped regions removed from the source, the drain or both regions in the substrate for improved linearity range when operated as a voltage-controlled resistor. The removal of the LDD and halo doped regions is performed by simply modifying the standard mask of the MOS process using a logic operation layer with no extra mask required.
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Patent Inventor Names
Kai-Yi Huang0
Ta-Hsun Yeh0
Yuh-Sheng Jean0
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US Patent 07986007 MOS transistor and manufacturing method thereof US Patent 7986007 MOS transistor and manufacturing method thereof
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Patent Number
07986007
Patent Number
7986007
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US Patent 07986007 MOS transistor and manufacturing method thereof
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Is a
Current assignee
Patent jurisdiction
Patent number
07986007
Date of patent
July 26, 2011
Patent application number
12056293
Date Filed
March 27, 2008
Patent primary examiner
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