Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
August 2, 2011
Patent Application Number
12591467
Date Filed
November 20, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage.
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