US Patent 7989887 Trench MOSFET with trenched floating gates as termination
All edits
Edits on 28 Nov, 2023
Golden AI
Edits made to:
Article (+374 characters)
Article
Patent abstract
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage.
Edits on 12 Jul, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 25 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07989887 Trench MOSFET with trenched floating gates as termination US Patent 7989887 Trench MOSFET with trenched floating gates as termination
Infobox
Patent Number
0798988700
Patent Number
798988700
Edits on 24 Mar, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
079898870
Date of Patent
August 2, 2011
0Patent Application Number
125914670
Date Filed
November 20, 2009
0Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
079898870
Date of Patent
August 2, 2011
0Patent Application Number
125914670
Date Filed
November 20, 2009
0Patent Primary Examiner
Edits on 8 Dec, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 07989887 Trench MOSFET with trenched floating gates as termination
Infobox
Is a
Patent jurisdiction
Patent number
07989887
Date of patent
August 2, 2011
Patent application number
12591467
Date Filed
November 20, 2009
Patent primary examiner
Find more entities like US Patent 7989887 Trench MOSFET with trenched floating gates as termination
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
