Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hisashi Ohtani0
Akiharu Miyanaga0
Hongyong Zhang0
Takeshi Fukunaga0
Date of Patent
August 16, 2011
0Patent Application Number
122190260
Date Filed
July 15, 2008
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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