US Patent 7998844 Method for manufacturing a semiconductor device
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Patent abstract
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
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Patent Inventor Names
Akiharu Miyanaga0
Hisashi Ohtani0
Hongyong Zhang0
Takeshi Fukunaga0
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US Patent 07998844 Method for manufacturing a semiconductor device US Patent 7998844 Method for manufacturing a semiconductor device
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Patent Number
079988440
Patent Number
79988440
Edits on 23 Sep, 2022
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Is a
Patent Jurisdiction
Patent Number
079988440
Date of Patent
August 16, 2011
0Patent Application Number
122190260
Date Filed
July 15, 2008
0Patent Primary Examiner
Edits on 8 Dec, 2021
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US Patent 07998844 Method for manufacturing a semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07998844
Date of patent
August 16, 2011
Patent application number
12219026
Date Filed
July 15, 2008
Patent primary examiner
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