US Patent 8013323 Nitride semiconductor and method for manufacturing thereof

Patent 8013323 was granted and assigned to LG on September, 2011 by the United States Patent and Trademark Office.

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Patent

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Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8013323

Date of Patent

September 6, 2011

Patent Application Number

12631767

Date Filed

December 4, 2009

Patent Primary Examiner

‌

Long K. Tran

Patent abstract

A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.

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