US Patent 8013323 Nitride semiconductor and method for manufacturing thereof
Patent 8013323 was granted and assigned to LG on September, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
Edits on 21 May, 2023
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US Patent 08013323 Nitride semiconductor and method for manufacturing thereof US Patent 8013323 Nitride semiconductor and method for manufacturing thereof
Infobox
Patent Number
0801332300
Patent Number
801332300
Edits on 27 Mar, 2023
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
080133230
Date of Patent
September 6, 2011
0Patent Application Number
126317670
Date Filed
December 4, 2009
0Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
080133230
Date of Patent
September 6, 2011
0Patent Application Number
126317670
Date Filed
December 4, 2009
0Patent Primary Examiner
Edits on 13 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 08013323 Nitride semiconductor and method for manufacturing thereof
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08013323
Date of patent
September 6, 2011
Patent application number
12631767
Date Filed
December 4, 2009
Patent primary examiner
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