Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 6, 2011
Patent Application Number
11724569
Date Filed
March 15, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for carrying out a replacement metal gate process comprises providing a transistor in a reactor, wherein the transistor includes a gate stack, removing at least a portion of the gate stack to expose a surface of a barrier layer, causing a temperature of the reactor be less than or equal to 150° C., introducing methylpyrrolidine:alane (MPA) proximate to the surface of the barrier layer, and carrying out a CVD process to deposit aluminum metal on the barrier layer using a bottom-up deposition mechanism.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
