Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
September 20, 2011
Patent Application Number
11766805
Date Filed
June 22, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating an integrated circuit (IC) chip includes forming a metal trace having a thickness of between 5μm and 27 μm over a semiconductor substrate, and forming a passivation layer on the metal trace, wherein the passivation layer includes a layer of silicon nitride on the metal trace and a layer of silicon oxide on the layer of silicon nitride, or includes a layer of silicon oxynitride on the metal trace and a layer of silicon oxide on the layer of silicon oxynitride.
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