US Patent 8030216 Method of making semiconductor device
Patent 8030216 was granted and assigned to Tokyo Electron on October, 2011 by the United States Patent and Trademark Office.
All edits
Edits on 28 Nov, 2023
Golden AI
Edits made to:
Article (+358 characters)
Article
Patent abstract
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.
Edits on 19 Oct, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 20 Sep, 2023
Golden AI
Edits made to:
Infobox (+2 properties)
Infobox
Patent Inventor Names
Naoto Umehara0
Shinichi Kozuka0
Edits on 15 Jul, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 08030216 Method of making semiconductor device US Patent 8030216 Method of making semiconductor device
Infobox
Patent Number
08030216
Patent Number
8030216
Edits on 13 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 08030216 Method of making semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08030216
Date of patent
October 4, 2011
Patent application number
12139029
Date Filed
June 13, 2008
Patent primary examiner
Find more entities like US Patent 8030216 Method of making semiconductor device
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
