Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 1, 2011
Patent Application Number
12556562
Date Filed
September 9, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
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