US Patent 8048225 Large-area bulk gallium nitride wafer and method of manufacture
All edits
Edits on 18 Sep, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Edits on 4 Jul, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 6 Jun, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 1 Feb, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 28 Nov, 2023
Golden AI
Edits made to:
Article (+472 characters)
Article
Patent abstract
The present invention includes a high-quality, large-area bulk GaN seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal is of ultra-low defect density, has flat surfaces free of bowing, and is free of foreign substrate material. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
Edits on 18 Oct, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 19 Jul, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 20 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 08048225 Large-area bulk gallium nitride wafer and method of manufacture US Patent 8048225 Large-area bulk gallium nitride wafer and method of manufacture
Infobox
Patent Number
0804822500
Patent Number
804822500
Edits on 5 Apr, 2023
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
080482250
Date of Patent
November 1, 2011
0Patent Application Number
125565620
Date Filed
September 9, 2009
0Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
080482250
Date of Patent
November 1, 2011
0Patent Application Number
125565620
Date Filed
September 9, 2009
0Patent Primary Examiner
Edits on 14 Dec, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 08048225 Large-area bulk gallium nitride wafer and method of manufacture
Infobox
Is a
Patent jurisdiction
Patent number
08048225
Date of patent
November 1, 2011
Patent application number
12556562
Date Filed
September 9, 2009
Patent primary examiner
Find more entities like US Patent 8048225 Large-area bulk gallium nitride wafer and method of manufacture
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
