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US Patent 8168544 Oxide etching method

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US Patent 12080720 Semiconductor device and manufacturing method thereof
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US Patent 11978742 Metal oxide film and method for forming metal oxide film
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US Patent 11955557 Semiconductor device and manufacturing method thereof
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US Patent 11923204 Manufacturing method of semiconductor device comprising oxide semiconductor
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Patent abstract

There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

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US Patent 11791417 Semiconductor device and manufacturing method thereof
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US Patent 11791415 Semiconductor device
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US Patent 11776968 Semiconductor device comprising oxide semiconductor layer
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Patent Inventor Names
Chienliu Chang0
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US Patent 08168544 Oxide etching method US Patent 8168544 Oxide etching method

Infobox
Patent Number
081685440
Patent Number
81685440
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
081685440
Date of Patent
May 1, 2012
0
Patent Application Number
123050990
Date Filed
July 18, 2007
0
Patent Primary Examiner
‌
Lan Vinh
0
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 US Patent 08168544 Oxide etching method

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
08168544
Date of patent
May 1, 2012
Patent application number
12305099
Date Filed
July 18, 2007
Patent primary examiner
‌
Lan Vinh

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