Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 8, 2012
Patent Application Number
12483439
Date Filed
June 12, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.
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