US Patent 8173553 Epitaxial wafer and production method thereof
Patent 8173553 was granted and assigned to SUMCO on May, 2012 by the United States Patent and Trademark Office.
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Patent abstract
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.
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US Patent 08173553 Epitaxial wafer and production method thereof US Patent 8173553 Epitaxial wafer and production method thereof
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Patent Number
0817355300
Patent Number
817355300
Edits on 4 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
081735530
Date of Patent
May 8, 2012
0Patent Application Number
124834390
Date Filed
June 12, 2009
0Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
081735530
Date of Patent
May 8, 2012
0Patent Application Number
124834390
Date Filed
June 12, 2009
0Patent Primary Examiner
Edits on 14 Dec, 2021
Golden AI
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Infobox (+8 properties)
US Patent 08173553 Epitaxial wafer and production method thereof
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08173553
Date of patent
May 8, 2012
Patent application number
12483439
Date Filed
June 12, 2009
Patent primary examiner
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