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US Patent 8193562 Enhancement mode gallium nitride power devices

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US Patent 12074150 Module configurations for integrated III-nitride devices
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US Patent 11973138 N-polar devices including a depleting layer with improved conductivity
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US Patent 11837642 Semiconductor device and method of fabricating the same
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Patent abstract

Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

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US Patent 11791385 Wide bandgap transistors with gate-source field plates
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US Patent 11749656 Module configurations for integrated III-Nitride devices
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US Patent 08193562 Enhancement mode gallium nitride power devices US Patent 8193562 Enhancement mode gallium nitride power devices

Infobox
Patent Number
0819356200
Patent Number
819356200
Edits on 30 Mar, 2023
"Entity importer update"
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
081935620
Date of Patent
June 5, 2012
0
Patent Application Number
130191500
Date Filed
February 1, 2011
0
Patent Primary Examiner
‌
Bac Au
0
Edits on 23 Sep, 2022
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Golden AI
edited on 23 Sep, 2022
Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
081935620
Date of Patent
June 5, 2012
0
Patent Application Number
130191500
Date Filed
February 1, 2011
0
Patent Primary Examiner
‌
Bac Au
0
Edits on 14 Dec, 2021
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created this topic on 14 Dec, 2021
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 US Patent 08193562 Enhancement mode gallium nitride power devices

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
08193562
Date of patent
June 5, 2012
Patent application number
13019150
Date Filed
February 1, 2011
Patent primary examiner
‌
Bac Au

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