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US Patent 8193562 Enhancement mode gallium nitride power devices
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Patent
Date Filed
February 1, 2011
Date of Patent
June 5, 2012
Patent Application Number
13019150
Patent Citations Received
US Patent 12074150 Module configurations for integrated III-nitride devices
0
US Patent 11791385 Wide bandgap transistors with gate-source field plates
US Patent 11837642 Semiconductor device and method of fabricating the same
0
US Patent 11973138 N-polar devices including a depleting layer with improved conductivity
0
US Patent 11749656 Module configurations for integrated III-Nitride devices
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8193562
Patent Primary Examiner
Bac Au
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