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US Patent 8237198 Semiconductor heterostructure diodes

Patent 8237198 was granted and assigned to Transphorm Inc. on August, 2012 by the United States Patent and Trademark Office.

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Is a

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Patent attributes

Current Assignee

Transphorm Inc.

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Ilan Ben-Yaacov0

Likun Shen0

Primit Parikh0

Rongming Chu0

Umesh Mishra0

Yifeng Wu0

Date of Patent

August 7, 2012

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Patent Application Number

130088740

Date Filed

January 18, 2011

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Patent Citations Received

US Patent 11923462 Lateral Schottky diode

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US Patent 11916119 Transistor with self-aligned gate and self-aligned source/drain terminal(s) and methods

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US Patent 12074150 Module configurations for integrated III-nitride devices

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US Patent 11973138 N-polar devices including a depleting layer with improved conductivity

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US Patent 11749656 Module configurations for integrated III-Nitride devices

Patent Primary Examiner

Victor A. Mandala, Jr.

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Patent abstract

Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.

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