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US Patent 8278656 Substrate for the epitaxial growth of gallium nitride

Patent 8278656 was granted and assigned to Saint-Gobain on October, 2012 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Saint-Gobain

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

82786560

Patent Inventor Names

Pascal Reutler0

Eric Mattmann0

Fabien Lienhart0

Date of Patent

October 2, 2012

Patent Application Number

126686760

Date Filed

July 11, 2008

Patent Citations Received

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US Patent 12091771 Large area group III nitride crystals and substrates, methods of making, and methods of use

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US Patent 11705322 Group III nitride substrate, method of making, and method of use

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US Patent 11788699 Fiber-delivered laser-induced dynamic light system

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US Patent 11884202 Laser-based fiber-coupled white light system

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US Patent 12000552 Laser-based fiber-coupled white light system for a vehicle

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US Patent 12000063 Large area group III nitride crystals and substrates, methods of making, and methods of use

Patent Primary Examiner

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Cuong Q Nguyen

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