US Patent 8278656 Substrate for the epitaxial growth of gallium nitride
Patent 8278656 was granted and assigned to Saint-Gobain on October, 2012 by the United States Patent and Trademark Office.
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Patent Inventor Names
Eric Mattmann0
Fabien Lienhart0
Pascal Reutler0
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US Patent 08278656 Substrate for the epitaxial growth of gallium nitride US Patent 8278656 Substrate for the epitaxial growth of gallium nitride
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Patent Number
082786560
Patent Number
82786560
Edits on 27 Sep, 2022
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
082786560
Date of Patent
October 2, 2012
0Patent Application Number
126686760
Date Filed
July 11, 2008
0Patent Primary Examiner
Edits on 15 Dec, 2021
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US Patent 08278656 Substrate for the epitaxial growth of gallium nitride
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08278656
Date of patent
October 2, 2012
Patent application number
12668676
Date Filed
July 11, 2008
Patent primary examiner
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