US Patent 8298336 High strip rate downstream chamber

Patent 8298336 was granted and assigned to Lam Research on October, 2012 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Lam Research

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

82983360

Patent Inventor Names

Ing-Yann Wang0

Robert P. Chebi0

David J. Cooperberg0

Erik A. Edelberg0

Jaroslaw W. Winniczek0

Date of Patent

October 30, 2012

Patent Application Number

110968200

Date Filed

April 1, 2005

Patent Citations Received

‌

US Patent 11830731 Semiconductor deposition reactor manifolds

Patent Primary Examiner

‌

Rudy Zervigon

No article content yet.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 8298336 High strip rate downstream chamber

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API