US Patent 8344436 Semiconductor constructions and electronic systems
Patent 8344436 was granted and assigned to Micron Technology on January, 2013 by the United States Patent and Trademark Office.
All edits
Edits on 3 Oct, 2024
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 29 Nov, 2023
Golden AI
Edits made to:
Article (+464 characters)
Article
Patent abstract
Some embodiments include DRAM having transistor gates extending partially over SOI, and methods of forming such DRAM. Unit cells of the DRAM may be within active region pedestals, and in some embodiments the unit cells may comprise capacitors having storage nodes in direct contact with sidewalls of the active region pedestals. Some embodiments include 0C1T memory having transistor gates entirely over SOI, and methods of forming such 0C1T memory.
Edits on 21 Sep, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Inventor Names
Kunal R. Parekh0
Edits on 13 Jul, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 08344436 Semiconductor constructions and electronic systems US Patent 8344436 Semiconductor constructions and electronic systems
Infobox
Patent Number
083444360
Patent Number
83444360
Edits on 6 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
083444360
Date of Patent
January 1, 2013
0Patent Application Number
131967610
Date Filed
August 2, 2011
0Patent Primary Examiner
Edits on 15 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 08344436 Semiconductor constructions and electronic systems
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08344436
Date of patent
January 1, 2013
Patent application number
13196761
Date Filed
August 2, 2011
Patent primary examiner
Find more entities like US Patent 8344436 Semiconductor constructions and electronic systems
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
