US Patent 8383521 Substrate processing method
Patent 8383521 was granted and assigned to Tokyo Electron on February, 2013 by the United States Patent and Trademark Office.
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A substrate processing method processes a substrate including a processing target film, an organic film provided on the processing target film and having a plurality of line-shaped portions having fine width, and a hard film covering the line-shaped portions and the processing target film exposed between the line-shaped portions. The method includes a first etching step of etching a part of the hard film to expose the organic film and portions of the processing target film between the line-shaped portions; an ashing step of selectively removing the exposed organic film; and a second etching step of etching a part of the remaining hard film.
US Patent 08383521 Substrate processing method US Patent 8383521 Substrate processing method
US Patent 08383521 Substrate processing method
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