Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 26, 2013
Patent Application Number
11940454
Date Filed
November 15, 2007
Patent Citations Received
Patent Primary Examiner
Patent abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
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