US Patent 8384090 Low 1C screw dislocation 3 inch silicon carbide wafer
Patent 8384090 was granted and assigned to Wolfspeed on February, 2013 by the United States Patent and Trademark Office.
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Patent abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
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US Patent 08384090 Low 1C screw dislocation 3 inch silicon carbide wafer US Patent 8384090 Low 1C screw dislocation 3 inch silicon carbide wafer
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Patent Number
0838409000
Patent Number
838409000
Edits on 3 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
083840900
Date of Patent
February 26, 2013
0Patent Application Number
119404540
Date Filed
November 15, 2007
0Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
083840900
Date of Patent
February 26, 2013
0Patent Application Number
119404540
Date Filed
November 15, 2007
0Patent Primary Examiner
Edits on 16 Dec, 2021
Golden AI
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Infobox (+8 properties)
US Patent 08384090 Low 1C screw dislocation 3 inch silicon carbide wafer
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08384090
Date of patent
February 26, 2013
Patent application number
11940454
Date Filed
November 15, 2007
Patent primary examiner
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