US Patent 8389416 Process for etching silicon with selectivity to silicon-germanium
Patent 8389416 was granted and assigned to Tokyo Electron on March, 2013 by the United States Patent and Trademark Office.
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Patent abstract
A method for performing a selective etching process is described. The method includes preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGex) layer, and selectively etching the silicon layer relative to the silicon-germanium layer using a dry plasma etching process.
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Patent Inventor Names
Vinh Hoang Luong0
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US Patent 08389416 Process for etching silicon with selectivity to silicon-germanium US Patent 8389416 Process for etching silicon with selectivity to silicon-germanium
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Patent Number
083894160
Patent Number
83894160
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
083894160
Date of Patent
March 5, 2013
0Patent Application Number
129516910
Date Filed
November 22, 2010
0Patent Primary Examiner
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US Patent 08389416 Process for etching silicon with selectivity to silicon-germanium
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08389416
Date of patent
March 5, 2013
Patent application number
12951691
Date Filed
November 22, 2010
Patent primary examiner
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