Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jin Fujihara0
Date of Patent
March 12, 2013
0Patent Application Number
125536110
Date Filed
September 3, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
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