Log in
Sign up
Golden has been acquired by ComplyAdvantage.Read about it here ⟶
‌

US Patent 8399931 Layout for multiple-fin SRAM cell

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 30, 2010
0
Date of Patent
March 19, 2013
0
Patent Application Number
12827690
0
Patent Citations Received
‌
US Patent 12087861 FinFETs and methods of forming FinFETs
0
‌
US Patent 12009399 Semiconductor device suppressing rounded shapes of source/drain contact layers
0
‌
US Patent 12062692 Tapered dielectric layer for preventing electrical shorting between gate and back side via
0
‌
US Patent 12068191 Low-resistance contact plugs and method forming same
0
‌
US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
‌
US Patent 11764220 Method of manufacturing a semiconductor device by patterning a serpentine cut pattern
‌
US Patent 11764286 Reducing parasitic capacitance for gate-all-around device by forming extra inner spacers
‌
US Patent 11769821 Semiconductor device having a corner spacer
‌
US Patent 11777009 Contacts for highly scaled transistors
‌
US Patent 11777035 Multi-layer film device and method
•••
Patent Inventor Names
Jeng-Jung Shen
0
Jhon Jhy Liaw
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
8399931
0
Patent Primary Examiner
‌
Dung A. Le
0

Find more entities like US Patent 8399931 Layout for multiple-fin SRAM cell

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo