US Patent 8415091 Water mark defect prevention for immersion lithography
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Patent abstract
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
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Patent Inventor Names
Ching-Yu Chang0
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Patent Citations Received
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US Patent 08415091 Water mark defect prevention for immersion lithography US Patent 8415091 Water mark defect prevention for immersion lithography
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Patent Number
084150910
Patent Number
84150910
Edits on 27 Sep, 2022
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Is a
Patent Jurisdiction
Patent Number
084150910
Date of Patent
April 9, 2013
0Patent Application Number
130799420
Date Filed
April 5, 2011
0Patent Primary Examiner
Edits on 16 Dec, 2021
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US Patent 08415091 Water mark defect prevention for immersion lithography
Infobox
Is a
Patent jurisdiction
Patent number
08415091
Date of patent
April 9, 2013
Patent application number
13079942
Date Filed
April 5, 2011
Patent primary examiner
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