US Patent 8486823 Methods of forming through via
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Patent abstract
A through via process is performed on a semiconductor substrate with a contact plug formed in an interlayer dielectric (ILD), and then a via plug is formed in the ILD layer to extend through a portion of the semiconductor substrate, followed forming an interconnection structure electrically connected with the contact plug and the via plug.
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Patent Inventor Names
Chen-Hua Yu0
Jung-Chih Hu0
Wen-Chih Chiou0
Weng-Jin Wu0
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US Patent 08486823 Methods of forming through via US Patent 8486823 Methods of forming through via
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Patent Number
084868230
Patent Number
84868230
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Official Website
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Patent Jurisdiction
Patent Number
084868230
Date of Patent
July 16, 2013
0Patent Application Number
120440080
Date Filed
March 7, 2008
0Official Website
Patent Primary Examiner
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US Patent 08486823 Methods of forming through via
Infobox
Is a
Patent jurisdiction
Patent number
08486823
Date of patent
July 16, 2013
Patent application number
12044008
Date Filed
March 7, 2008
Patent primary examiner
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