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US Patent 8618556 FinFET design and method of fabricating same

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US Patent 12132111 Formation method of semiconductor device structure with gate stacks
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US Patent 11855151 Multi-gate device and method of fabrication thereof
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US Patent 11749720 Integrated circuit structure and method with solid phase diffusion
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 08618556 FinFET design and method of fabricating same US Patent 8618556 FinFET design and method of fabricating same

Infobox
Patent Number
08618556
Patent Number
8618556
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 US Patent 08618556 FinFET design and method of fabricating same

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
08618556
Date of patent
December 31, 2013
Patent application number
13174170
Date Filed
June 30, 2011
Patent primary examiner
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Whitney T Moore

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