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US Patent 8618556 FinFET design and method of fabricating same

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 30, 2011
Date of Patent
December 31, 2013
Patent Application Number
13174170
Patent Citations Received
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US Patent 12132111 Formation method of semiconductor device structure with gate stacks
0
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US Patent 11855151 Multi-gate device and method of fabrication thereof
0
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
0
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US Patent 11749720 Integrated circuit structure and method with solid phase diffusion
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8618556
Patent Primary Examiner
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Whitney T Moore

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