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US Patent 8661389 Systems and methods of designing integrated circuits

Patent 8661389 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2014 by the United States Patent and Trademark Office.

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Patent

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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8661389
Date of Patent
February 25, 2014
Patent Application Number
13084748
Date Filed
April 12, 2011
Patent Citations Received
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US Patent 12089390 Cell manufacturing
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US Patent 11935882 Static random access memory device
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US Patent 11978732 Methods of manufacturing semiconductor devices
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US Patent 11990511 Source/drain device and method of forming thereof
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US Patent 11675954 Method of designing a device
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US Patent 11714949 Leakage analysis on semiconductor device
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US Patent 11714946 Standard cell and semiconductor device including anchor nodes and method of making
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US Patent 11714947 Method and layout of an integrated circuit
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...
Patent Primary Examiner
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Vuthe Siek
Patent abstract

A method of designing an integrated circuit includes providing a cell library including a first and second cell structures. The cell structures each include a dummy gate electrode disposed on a boundary. An edge gate electrode is disposed adjacent to the dummy gate electrode. An oxide definition (OD) region has an edge disposed between the edge gate electrode and the dummy gate electrode. The method includes determining if the cell structures are to be abutted with each other. If so, the method includes abutting the cell structures. If not so, the method includes increasing areas of portions of the OD regions between the edge gate electrodes and the dummy gate electrodes.

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