Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Josephine B. Chang0
Chung-Hsun Lin0
Jeffrey W. Sleight0
Leland Chang0
Date of Patent
April 29, 2014
0Patent Application Number
133280690
Date Filed
December 16, 2011
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a hybrid semiconductor structure on an SOI substrate. The method includes an integrated process flow to form a nanowire mesh device and a PDSOI device on the same SOI substrate. Also included is a semiconductor structure which includes the nanowire mesh device and the PDSOI device on the same SOI substrate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
