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US Patent 8809139 Fin-last FinFET and methods of forming same

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Clement Hsingjen Wann0

Ming-Huan Tsai0

Yu-Lien Huang0

Date of Patent

August 19, 2014

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Patent Application Number

136893460

Date Filed

November 29, 2012

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Patent Citations Received

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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices

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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow

US Patent 11749724 Semiconductor device and method of forming the same

US Patent 12009427 Semiconductor device and manufacturing method thereof

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US Patent 11942548 Multi-gate device and method of fabrication thereof

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US Patent 11769771 FinFET device having flat-top epitaxial features and method of making the same

US Patent 11949015 Mechanisms for growing epitaxy structure of finFET device

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