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US Patent 8809139 Fin-last FinFET and methods of forming same

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
November 29, 2012
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Date of Patent
August 19, 2014
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Patent Application Number
13689346
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Patent Citations Received
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
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US Patent 11749724 Semiconductor device and method of forming the same
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US Patent 12009427 Semiconductor device and manufacturing method thereof
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US Patent 11942548 Multi-gate device and method of fabrication thereof
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US Patent 11769771 FinFET device having flat-top epitaxial features and method of making the same
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US Patent 11949015 Mechanisms for growing epitaxy structure of finFET device
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US Patent 11948971 Confined source/drain epitaxy regions and method forming same
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Patent Inventor Names
Clement Hsingjen Wann
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Ming-Huan Tsai
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Yu-Lien Huang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
8809139
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