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US Patent 8841777 Bonded structure employing metal semiconductor alloy bonding
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Patent
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Date Filed
January 12, 2010
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Date of Patent
September 23, 2014
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Patent Application Number
12685954
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Patent Citations Received
US Patent 12136562 3D semiconductor device and structure with single-crystal layers
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US Patent 12068187 3D semiconductor device and structure with bonding and DRAM memory cells
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US Patent 12080743 Multilevel semiconductor device and structure with image sensors and wafer bonding
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US Patent 12094892 3D micro display device and structure
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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells
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US Patent 12119318 Bonding structure and method of forming same
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US Patent 12120880 3D semiconductor device and structure with logic and memory
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US Patent 12125737 3D semiconductor device and structure with metal layers and memory cells
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US Patent 11711928 3D memory devices and structures with control circuits
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US Patent 11756886 Hybrid manufacturing of microeletronic assemblies with first and second integrated circuit structures
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Patent Inventor Names
Zhengwen Li
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Zhijiong Luo
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Huilong Zhu
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Mukta G. Farooq
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8841777
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Patent Primary Examiner
Jarrett Stark
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