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US Patent 8852347 Apparatus for chemical vapor deposition control

Patent 8852347 was granted and assigned to Tokyo Electron on October, 2014 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Tokyo Electron

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

88523470

Patent Inventor Names

Eric J. Strang0

Eric M. Lee0

Jacques Faguet0

Date of Patent

October 7, 2014

Patent Application Number

128142780

Date Filed

June 11, 2010

Patent Citations Received

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US Patent 12125673 Pulsed voltage source for plasma processing applications

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US Patent 11967483 Plasma excitation with ion energy control

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US Patent 11972924 Pulsed voltage source for plasma processing applications

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US Patent 11984306 Plasma chamber and chamber component cleaning methods

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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber

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US Patent 12111341 In-situ electric field detection method and apparatus

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US Patent 11776788 Pulsed voltage boost for substrate processing

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Patent Primary Examiner

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Gordon R Baldwin

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