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US Patent 8852347 Apparatus for chemical vapor deposition control

Patent 8852347 was granted and assigned to Tokyo Electron on October, 2014 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Tokyo Electron
Tokyo Electron
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Date Filed
June 11, 2010
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Date of Patent
October 7, 2014
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Patent Application Number
12814278
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Patent Citations Received
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US Patent 12125673 Pulsed voltage source for plasma processing applications
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US Patent 11967483 Plasma excitation with ion energy control
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US Patent 11972924 Pulsed voltage source for plasma processing applications
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US Patent 11984306 Plasma chamber and chamber component cleaning methods
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
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US Patent 12111341 In-situ electric field detection method and apparatus
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US Patent 11776788 Pulsed voltage boost for substrate processing
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US Patent 11776789 Plasma processing assembly using pulsed-voltage and radio-frequency power
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US Patent 11791138 Automatic electrostatic chuck bias compensation during plasma processing
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US Patent 11887813 Pulsed voltage source for plasma processing
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•••
Patent Inventor Names
Eric J. Strang
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Eric M. Lee
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Jacques Faguet
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
8852347
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Patent Primary Examiner
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Gordon R Baldwin
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