US Patent 8916477 Polysilicon etch with high selectivity

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8916477

Patent Inventor Names

Jack Kuo0

Bayu Thedjoisworo0

David Cheung0

Joon Park0

Date of Patent

December 23, 2014

Patent Application Number

13916387

Date Filed

June 12, 2013

Patent Citations Received

‌

US Patent 11864378 Semiconductor device and method for manufacturing semiconductor device

‌

US Patent 11770112 MEMS resonator with co-located temperature sensor

Patent Primary Examiner

‌

Lan Vinh

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