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US Patent 8981502 Fabricating a magnetic tunnel junction storage element

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 29, 2010
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Date of Patent
March 17, 2015
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Patent Application Number
12748750
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Patent Citations Received
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US Patent 12063865 Method of manufacturing integrated circuit using encapsulation during an etch process
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US Patent 11785861 Semiconductor structure and method of manufacturing the same
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US Patent 11925122 Magnetoresistive structure having two dielectric layers, and method of manufacturing same
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Patent Inventor Names
Seung H. Kang
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Wei-Chuan Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
8981502
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Patent Primary Examiner
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Savitr Mulpuri
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