US Patent 9012324 Through silicon via process
Patent 9012324 was granted and assigned to United Microelectronics Corporation on April, 2015 by the United States Patent and Trademark Office.
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Patent abstract
A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.
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Patent Inventor Names
Chi-Mao Hsu0
Chien-Li Kuo0
Ching-Li Yang0
Ching-Wei Hsu0
Huei-Ru Tsai0
Jia-Jia Chen0
Szu-Hao Lai0
Tsai-Yu Wen0
Tsun-Min Cheng0
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US Patent 09012324 Through silicon via process US Patent 9012324 Through silicon via process
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Patent Number
09012324
Patent Number
9012324
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US Patent 09012324 Through silicon via process
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Is a
Current assignee
Patent jurisdiction
Patent number
09012324
Date of patent
April 21, 2015
Patent application number
13593517
Date Filed
August 24, 2012
Patent primary examiner
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