Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ekaterina Yurchuk0
Stefan Ferdinand Müller0
Uwe Schröder0
Date of Patent
June 9, 2015
0Patent Application Number
139093940
Date Filed
June 4, 2013
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).
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