US Patent 9053802 Ferroelectric memory cell for an integrated circuit

An integrated circuit includes a ferroelectric memory cell. In one embodiment, the ferroelectric memory cell includes a first oxide storage layer, a second oxide storage layer, and an amorphous layer disposed between the first and second oxide storage layers. Each of the first and second oxide storage layers includes a ferroelectric material that is at least partially in a ferroelectric state and further includes, as main components, oxygen and any of the group consisting of Hf, Zr and (Hf,Zr).