Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 16, 2015
Patent Application Number
14296522
Date Filed
June 5, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method includes patterning a fin on a semiconductor substrate, depositing a local trench isolation (LTI) layer on the semiconductor substrate, patterning a gate stack over a channel region of the fin and over a portion of the LTI layer, depositing a first capping layer over exposed portions of the LTI layer, performing an etching process to remove oxide material from exposed portions of the fin, and epitaxially growing a semiconductor material from exposed portions of the fin to define active regions.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
