US Patent 9059290 FinFET device formation

A method includes patterning a fin on a semiconductor substrate, depositing a local trench isolation (LTI) layer on the semiconductor substrate, patterning a gate stack over a channel region of the fin and over a portion of the LTI layer, depositing a first capping layer over exposed portions of the LTI layer, performing an etching process to remove oxide material from exposed portions of the fin, and epitaxially growing a semiconductor material from exposed portions of the fin to define active regions.