US Patent 9105572 Magnetic memory and manufacturing method thereof

According to one embodiment, a magnetic memory includes a cell transistor including a first source/drain diffusion layer and a second source/drain diffusion layer, a first contact on the first source/drain diffusion layer, a memory element on the first contact, and a second contact on the second source/drain diffusion layer, the second contact including a first plug on the second source/drain diffusion layer, and a second plug on the first plug.